Aneeve Nanotechnologies

Aneeve in Printed Electronics World Article

November 20, 2013adminUncategorizedComments Off on Aneeve in Printed Electronics World Article

Aneeve demonstrates

TFTs as mentioned in the Printed Electronics

World Article. Website: http://www.printedelectronicsworld.com/articles/invisible-printed-electronics-using-carbon-nanotubes-00005993.asp

 

PrintedWorld1

 

Demo of Fully Printed and Transparent TFT in APL journal

October 7, 2013adminUncategorizedComments Off on Demo of Fully Printed and Transparent TFT in APL journal

Aneeve demonstrates fully

printed and transparent TFTs in

APL journal.

http://apl.aip.org/resource/1/applab/v103/i14/p143303_s1?view=fulltext&bypassSSO=1

 

Aneeve demonstrates high throughput CNT patterning.

March 1, 2013adminUncategorizedComments Off on Aneeve demonstrates high throughput CNT patterning.

Aneeve is the first to demonstrated high throughput CNT patterning on plastic towards roll-to-roll CNT TFT display and pathway to high-throughput, room temperature, benchtop transparent display manufacture.

Aneeve demonstrates the first “fully” printed all-CNT transparent TFT platform

November 1, 2012adminIn The NewsComments Off on Aneeve demonstrates the first “fully” printed all-CNT transparent TFT platform

Aneeve is the first to demonstrated a “fully” printed ink-jet CNT transistor “transparent” technology platform towards transparent display applications.

The

consumer products.

Aneeve has been successful in innovating its “base” TFT technology to possess fully transparent TFT properties enabled by printing “all-CNT” transistors that posses both high transparency and high electronic performance. These

unique transistors employ the superior electronic performance of semiconducting carbon nanotubes (CNTs), going beyond materials such as amorphous silicon and metal oxide semiconductors. These devices employ “all-CNT” materials. To the best of our knowledge, such a technological breakthrough is the first to be reported and adds viability to the CNT approach and pathway to transparent displays as was intended to do so via the Phase I NSF SBIR. Our team has demonstrated this capability on both silicon and glass substrates together with top-gated device topologies.

  • Fully printed “all-CNT” top-gated TFT.
  • No vacuum equipment used.
  • Transparent and high electronic performance.

 

 

Awarded Phase 1 SBIR from the Air Force on “Graphene Memory Devices”

May 24, 2012adminIn The NewsComments Off on Awarded Phase 1 SBIR from the Air Force on “Graphene Memory Devices”
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