Aneeve Nanotechnologies

Awarded Phase 1 SBIR from DTRA on “Wide Bandgap Channel Materials”

July 18, 2014adminUncategorizedComments Off on Awarded Phase 1 SBIR from DTRA on “Wide Bandgap Channel Materials”

Aneeve is developing wide bandgap channel materials such as ZnO and IGZO that are able to be printed and microelectronic fabricated into devices for high speed circuits, microwave amplifiers, ultra-low power circuits, sensors, and thin film circuits.  Wide bandgap materials have several characteristics that make them useful compared to lower bandgap materials.  The higher energy gap gives devices the ability to operate at higher temperatures,and for some applications, allows devices to switch larger voltages.  The wide bandgap also brings the electronic transition energy into the range of the energy of visible light, and hence light-emitting devices such as light-emitting diodes (LEDs).  Wide bandgap semiconductors can also be used in RF signal processing.  Silicon-based power transistors are reaching limits of operating frequency, breakdown voltage, and power density.  Wide bandgap materials can be used in high-temperature and power switching applications.


IGZO is a revolutionary, transparent compound semiconductor that Sharp is the first to successfully mass-produce and bring to market. IGZO opens the door to countless breakthroughs, from crystal clear displays to lower energy and even life-changing technology of the future.


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